CMOS Backplane

CMOS Backplane

Keywords: LED,micro LED,CMOS backplane, micro display

We offer the backplane and driver platform that allows LED partners to develop their own complete display hardware and software systems. Our silicon backplane uses pulse width modulation (PWM) to digitally and directly drive displays; proprietary modulation patterns can be used as desired.

We offer the backplane and driver platform that allows LED partners to develop their own complete display hardware and software systems. Our silicon backplane uses pulse width modulation (PWM) to digitally and directly drive displays; proprietary modulation patterns can be used as desired. 

Proven for both monochrome and full color Micro LEDs, our backplane reduces development cost, risk, and time-to-market cycle and helps customers to meet their development goals. 

The silicon backplane is a digitally modulated, versatile addressable active matrix. Our highly configurable driver supports a wide array of modulation schemes while maintaining constant current LED drivers. The benefits of using our backplane are as follows: 

  • Smallest pixel size

  • Self-emissive

  • High efficiency

  • High brightness

  • High contrast

  • Rapid response time

  • Long lifetime 

Several wafer products are available, each of which contain unique silicon backplanes targeted for a variety of applications. 

Part number

STJ-2552

STJ-27ET

STJ-2704

STJ-2124

STJ-27EP

Size

8 inch

8 inch

8 inch

8 inch

8 inch

Die size, mm²

15.92 x 11.87

19.05 x 13.65

19.14 x 13.57

30.63 x 19.97

19.05 x   13.65

Active area   diagonal

0.55 inch

0.7 inch

0.7 inch

1.2 inch

0.7 inch

Pixel pitch

6.4 μm

8 μm

3.74 μm

6.4 μm

40 μm

Gross dies   per wafer

129

92

94

33

92

Active   resolution

1920 x 1080

1920 x 1080

4096 x 2400

4096 x 2400

246 x 82

Power source   type

Voltage

Current

Voltage

Voltage

Current

1.     Product Specification of STJ-2552 (SP55 Microdisplay Die in Wafer Form)

This is a general specification for our STJ-2552 Microdisplay Die in Wafer Form Specification (HDTV resolution) for use in Liquid Crystal on Silicon (LCOS) microdisplay applications. Our high performance microdisplay die is a full digital backplane and is targeted for use in single and multi-channel optical systems for amplitude and phase modulation applications.

The SP55 microdisplay die has an array diagonal of 0.55” and offers a total resolution of (1952×1112); an additional 32 columns and 32 rows have been added beyond normal HDTV resolution to allow for dynamic, convergence adjustment of the microdisplay component. Microdisplay manufactured using the STJ-2552 wafer are used with a companion OCM Controller ASIC. 

FEATURES:

  • HDTV (1920 x 1080)

  • Additional 32 columns and 32 rows for electronic alignment (for a      total resolution of 1952×1112)

  • 0.55” diagonal

  • Up to 480 Hz color field rate (Support 120 Hz frame rate or above      for HD Video)

  • Up to 5V (adjustable) operation of Array for LC Performance

  • LVCMOS compatible I/O interface for Speed and Low Power

  • Controllable image border grayscale

  • Single panel solution, optimized OCM Controller ASIC

  • Amplitude and phase modulation applications 

GENERAL SPECIFICATION:

Die Features

Resolution (active)

1920 x 1080

Resolution (addressable)

1952 x 1112

Pixel Pitch

6.4 um

Active Area

12.5 mm x 7.1 mm

Die Size

15.92 mm x 11.87 mm

Aperture Ratio

≧93%

Reflectivity (aluminum   only, 1400 – 2000 nm)

94%

Die Planarity

<100nm

Dead Pixels per Die

None, Tested for 100%   live Pixels

Wafer Features

Wafer Diameter

200.0 ± 0.50 mm

Wafer Thickness

725 ± 15 µm

Wafer Orientation Mark

Notch

MTTF (design target)

>20,000 hours

Environmental   Considerations -Operating

Typical Operating   Temperature

40°C to 50°C

Extended Temperature   Range

10°C to 65°C

Humidity

10% to 80%, non   condensing

Environmental   Considerations -Storage

Temperature

-20°C to 70°C

Storage

In Dry Nitrogen sealed   wafer carrier

2.     Product Specification of STJ-27ET

The STJ-27ET is an 8” silicon wafer of STJ-JD67ET die. The STJ-27ET is a current source pixel array backplane designed for realizing emissive Micro LED and OLED products. Up to 2.0 Amps of current is available for high brightness and global dimming for high contrast. Digital modulation allows for stable color. Pixel current and voltage are fully programmable. 

The STJ-27ET is ideally suited for ­LED and OLED applications such as AR and HUDs. 

FEATURES

  •  0.7” active area diagonal15.36 mm x 8.64 mm die active area

  • 1920 x 1080 resolution (mono)

  • 960 x 540 resolution (color)

  • 4 sub-pixels with programmable current and voltage

  • Digital modulation per pixel

  • Current source pixel architecture

  • 8.0 µm pixel pitch

  • 1.2 µm pixel ga

  • Amps total current

  • to 1.0 µA per pixel

  • 18 kÅ top metal (Al) thickness

  • Known Good Die map

  • Individual forward voltage measurement

  • Individual LED driver current measurement

  • Large common cathode return

  • 180 nm CMOS 

GENERAL SPECIFICATION

Specifications

Process Technology

180 nm CMOS

Die Size

19.050 mm x 13.650 mm

Gross Dice per 8” Wafer

92

Active Area Diagonal

0.7”

Active Area

15.36 mm x 8.64 mm

Resolution (Monochrome)

1920 x 1080

Resolution (Color)

960 x 540

Pixel Pitch

8.0 μm

Pixel Gap

1.2 μm

Pixel Aluminum Area

6.8 μm x 6.8 μm

Total Current Drive

2.0 Amps

Current Drive per Pixel

0.1 to 1.0 μA

Pixel Power Source Type

Current Drive

Top Metal (Al) Thickness

18 kÅ

Constant Supply Scheme

Common Cathode Return

3.     Product Specification of STJ-2704 (Q4K70 Microdisplay Die in Wafer Form) 

This is a general specification for our STJ-2704 Microdisplay Die in Wafer Form Specification (4K2K resolution) for use in Liquid Crystal on Silicon (LCOS) microdisplay applications. Our high performance microdisplay die is a full digital backplane and is targeted for use in single and multi-channel optical systems for amplitude and phase modulation applications. 

The Q4K70 microdisplay die has an array diagonal of 0.70” and offers a total resolution of 4160×2464; an additional 64 columns and 64 rows have been added beyond the 4K2K superset (4096×2400) to allow dynamic, convergence adjustment of the microdisplay component. Microdisplays manufactured using the STJ-JD2704 wafer are used with a companion driver board solution. 

FEATURES

  • 4K2K (4096 x 2400) active 3.74 um pixels

  • Additional 64 columns and 64 rows for electronic alignment (for a      total resolution of 4160×2464)

  • superset of DCI 4K “Scope” (4096 x 1716) and “Flat” (3996 x 2160) and      Quad WUXGA resolutions (3840×2400)

  • 0.70” diagonal

  • Up to 180 Hz color field rate (Supports 60 Hz RGB frame rate, 180      Hz monochrome)

  • Up to 5V (adjustable) operation of Array for LC Performance

  • LVCMOS compatible I/O interface for Speed and Low Power

  • Controllable image border grayscale

  • Driver board solutions for single and multichannel system.

  • Amplitude and phase modulation applications 

GENERAL SPECIFICATION

Die Features

Resolution (active)

4096 x 2400

Resolution (addressable)

4160 x 2464

Pixel Pitch

3.74 um

Active Area

15.319 mm x 8.976 mm

Addressable Area

15.558 mm x 9.215 mm

Die Size

19.146 mm x 13.574 mm

Aperture Ratio

≧90%

Reflectivity (aluminum   only, 1400 – 2000 nm)

94%

Dead Pixels per Die

0 allowed, all die tested   for 100% good pixel storage*

Wafer Features

Wafer Planarity

<15um Bow

Wafer Diameter

200.0 ± 0.50 mm (“8 in”)

Wafer Thickness

725 ± 15 µm

Wafer Orientation Mark

Notch

Environmental   Considerations -Operating

Typical Operating   Temperature

40°C to 50°C

MTTF (design target)

>20,000 hours

Extended Temperature   Range

10°C to 65°C

Humidity

10% to 80%, non   condensing

Environmental   Considerations -Storage

Temperature

-20°C to 70°C

Humidity

In Dry Nitrogen sealed wafer   carrier

* Wafers are delivered with Wafer Maps of the Good Die. 

4. Product Specification of STJ-2124

Large LCoS Silicon Backplane 

Spatial Light Modulation (SLM) have been adopted in various electro-optical applications using best-fit silicon backplanes with particular number of pixels, pixel pitches, glass, and liquid crystals. As design progresses into higher ends, bigger display areas are becoming necessity. 

STJDC’s 1.2” Silicon Backplane 

We offer high performance microdisplay die in a full digital backplane and is targeted for use in single and multi-channel optical systems for amplitude and phase modulation applications. 

The V4K120 microdisplay die has an array diagonal of 1.2” and offers a total of 4160×2464 pixels; additional 64 columns and 64 rows are added beyond the 4K2K superset (4096×2400) to allow dynamic, convergence adjustment of the microdisplay component. Microdisplays manufactured using the JD2124 wafer can be driven by a companion our driver board solution. 

General Specifications

  • 4K2K (4096 x 2400) active 6.4 um pixels

  • Additional 64 columns and 64 rows for electronic alignment (for a      total resolution of 4160×2464)

  • Superset of DCI 4K “Scope” (4096 x 1716) and “Flat” (3996 x 2160)      and Quad WUXGA resolutions (3840×2400)

  • 1.2” diagonal

  • Up to 480Hz for 1P color sequential, 240 Hz for 3P VAN

  • Up to 5V (adjustable) operation of Array for LC Performance

  • LVCMOS compatible I/O interface for Speed and Low Power

  • Controllable image border grayscale

  • Driver board solutions for single and multichannel system.

  • Amplitude and phase modulation applications 

5. Product Specification of STJ-27EP 

The STJ-27EP is a Micro LED Start Kit that includes the essential tools and materials for infrastructure development1 with emissive elements.

It includes the STJ-27EP which is a current source pixel array silicon backplane (X-on-Silicon) wafer, designed for realizing high-power Micro LED products. 

FEATURES

  • Constant current for stable wavelength per subpixel

  • Digital pulse modulation for variable brightness

  • Global dimming control to enhance contrast

  • Large Common Cathode Return

  • Thick top metal layer

  • Total 10.0 Amps current to drive LEDs 

GENERAL SPECIFICATION

Wafer   Specifications

Process Technology

150 nm CMOS, 8″ wafer

Die Size

19.05 x 13.65 mm²

Gross Dice per 8” Wafer

92

Active Area Diagonal

0.7”

Programmable Color Pixels

1 (Monochrome)

Active Resolution

246 x 82

Active Area Size

9.84 mm x 3.28 mm

Pixel Pitch

40 μm

Pixel Gap

6 μm

Pixel Electrode Size

34 μm x 34 μm

Total Current Drive

10.0 Amps

Drive Current per LED Pixel

Max. 1.9 mA

Pixel Power Source Type

Current Drive

Top Metal (Al) Thickness

18 kÅ

Common Current Configuration

Common Cathode Return

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