Diode Chip/Bar/Stack

Diode Chip/Bar/Stack

Keywords: diode chip, laser chip, diode bar, diode stack, pumping modul
Jun 16, 2021 View: 9477 Data Sheet

Laser diode chips, bars stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and mult

Laser diode chips, bars & stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and multi-mode, a few hundred watts, COS/COC/MCC packages. Customized products are available upon request. These products are widely used in laser industrial material processing, medical application, communications, safety protection, intelligent sensing, and scientific research.

STCX Series High-power Diode Laser Chips/Bars/Arrays/Stacks

(1)   High-power Single Emitter Laser Chips – BC Series

 

Optical




Center Wavelengthnm915915976976
Wavelength Tolerancenm±10±10±3±3
Output PowerW25302530
Operating Mode#CWCWCWCW
Fast-axis DivergenceDeg55555555
Slow-axis DivergenceDeg9.59.59.59.5
Spectral Width (FWHM)nm4444
Wavelength Temp Coefficientnm/℃0.30.30.330.33
TE Polarization%97979797
Electrical




Emitter Widthμm195230195230
Cavity Lengthmm4.54.54.54.5
Widthμm400400400400
Thicknessμm145145145145
Geometric




Electro-optic  Conversion Eff.%62626363
Slope EfficiencyW/A1.151.151.11.1
Thershold CurrentA1.51.81.11.5
Operating CurrentA25302530
Operating VoltageV1.651.651.551.55

(2)   High-power Diode Bar – BB Series

Optical






Center Wavelengthnm808808808808940940
Wavelength Tolerancenm±10±10±10±3±3±3
Output PowerW5060100≥500200≥700
Fast-axis DivergenceDeg≤65≤65≤65≤65≤55≤55
Slow-axis DivergenceDeg≤8.5≤8.5≤8.5≤8.5≤8.5≤8.5
Spectral Width (FWHM)nm≤2.5≤2.5≤3≤3.5≤35
TE PolarizationTM/TETETETETETETE
Wavelength Temp Coefficientnm/℃0.280.280.280.280.30.3
Electrical






Electro-optic Conversion Eff%≥55≥55≥55≥58≥63≥63
Slope EfficiencyW/A1.251.251.251.2511.15
Threshold CurrentA81215252525
Operating CurrentA5060105≤430220650
Operating VoltageV1.81.81.82.01.551.7
Pulse Widthus---200-500
Pulse frequencyHz---400-160
Pulse duty cycle%---8-8
Geometric






Number of Emitters#194949342434
Emitter Widthμm150100100232200232
Emitter Pitchμm500200200290400290
Fill Factor%305050805080
Cavity Lengthmm1.01.01.51.532
Bar Thicknessμm145145145115115115
Bar Lengthmm10101010.2510.2510.25
Thermal






Operating Temperature252525252025
Storage Temperature40~80-40~8040~8040~80-40~8040~80
Flow VelocityL/min/0.250.250.200.250.25

(3)   High-power Diode VCSEL Chips – TOF series

 

Optical




Center Wavelength@Iopnm808850940940
Spectral width (half width)nm2222
Wavelength shift / temperaturenm/℃0.070.070.070.07
Emitter apertureμm10101010
Emitter minimum pitchμm44473340
Emitter number/6211216305364
Output PowerW3.142.13.1
Operating currentA3.552.83.5
Power consumptionW7105.67
Operating VoltageV2222
Operating efficiency%35404040
Threshold currentA0.71.20.380.47
Divergence angle°22222020
Geometric




Emitter lengthμm9161535525916
Emitter widthμm9011560615610
Chip lengthμm12061845695996
Chip widthμm10061670795890
Chip thicknessμm100100100100

(4)   High-power Diode VCSEL Chips – SL Series

 

Optical



Center Wavelength@Iopnm934940946
Spectral width (half width)nm
2
Wavelength shift / temperaturenm/℃
0.07
Emitter apertureμm
8
Emitter minimum pitchμm
21
Emitter number(Area A)-
377
Emitter number(Area B)-
6
Output Power(Area A)W1.31.51.7
Output Power(Area B)W
0.024
Single point powerW
0.004
Operating current(Area A)A
3.6
Operating current(Area B)A
0.06
Power consumption(Area A)W
3.6
Power consumption(Area B)W
0.06
Operating VoltageV
2
Operating efficiency%
4045
Threshold current(Area A)A
0.38
Threshold current(Area B)A
0.006
Divergence angle°
20
Geometric



Luminous zone lengthμm
523
Light-emitting area widthμm
548
Chip lengthμm758778798
Chip widthμm701721741
Chip thicknessμm90100110

(5)   High-power Diode VCSEL Chips – LI Series

Optical


Center Wavelengthnm905940
Spectral width (half width)nm22
Wavelength shift / temperaturenm/℃0.070.07
Emitter apertureμm1212
Emitter minimum pitchμm2222
Emitter number/136136
Output PowerW6060
Operating currentA1515
Power consumptionW300300
Operating VoltageV2525
Operating efficiency%2020
Threshold currentA0.20.2
Divergence angle°2020
Geometric


Emitter lengthμm273273
Emitter widthμm288288
Chip lengthμm520520
Chip widthμm401401
Chip thicknessμm100100

(6)   High-power Diode Laser Device – COS Series

Optical




Center Wavelengthnm915915976976
Wavelength Tolerancenm±10±10±3±3
Output PowerW25302530
Operating Mode#CWCWCWCW
Fast-axis DivergenceDeg55555555
Slow-axis DivergenceDeg9.59.59.59.5
Spectral Width (FWHM)nm4444
Wavelength Temperature Coefficientnm/℃0.30.30.330.33
TE Polarization%97979797
Electrical




Electrio-optic Conversion Eff%62626363
Slope EfficiencyW/A1.151.151.11.1
Thershold CurrentA1.51.81.11.5
Operating CurrentA25302530
Operating VoltageV1.651.651.551.55
Geometric




Emitter Widthμm195230195230
Cavity Lengthmm4.54.54.54.5
Widthμm400400400400
Thicknessμm145145145145

(7)   High-power Diode Laser Devices – MCC Series

Optical






Center Wavelengthnm808808808808940940
Wavelength Tolerancenm±10±10±10±10±3±3
Output PowerW5060100≥500200200
Fast-axis DivergenceDeg≤65≤65≤65≤65≤55≤55
Slow-axis DivergenceDeg≤8.5≤8.5≤8.5≤8.5≤8.5≤8.5
Spectral Width (FWHM)nm≤2.5≤2.5≤3≤3.5≤3≤3
Polarization ModeTM/TE



TETE
Wavelength Temperature Coefficientnm/℃0.280.280.280.280.30.3
Electrical






Electrio-optic Conversion Eff%≥55≥55≥55≥58≥63≥63
Slope EfficiencyW/A1.251.251.251.2511.15
Thershold CurrentA81215252525
Operating CurrentA5060105≤430220650
Operating VoltageV1.81.81.82.01.551.7
Pulse Widthus---200-500
Pulse frequencyHz---400-160
Pulse Duty Cycle%---8-8
Geometric






Number of Emitters#194949342434
Emitter Widthμm150100100232200232
Emitter Pitchμm500200200290400290
Fill Factor%305050805080
Cavity Lengthmm1.01.01.51.532
Bar Thicknessμm145145145115115115
Bar Lengthmm10101010.2510.2510.25
Thermal






Operating Temp.252525252025
Storage temp.-40~80-40~80-40~80-40~80-40~80-40~80
Water Flow RateL/min/0.250.250.200.250.25

(8)   High-power Diode Laser Stacks – MCP Series

Optical



Center Wavelengthnm808808808
Wavelength Tolerancenm±10±10±3
Output PowerW60100300
Number of Bars#2 ~ 602 ~ 602 ~ 60
Spectral Width (FWHM)nm≤8≤84
Operating Mode#CWCWQCW
Fast-axis DivergenceDeg≤42≤4240
Slow-axis DivergenceDeg≤10≤1010
Wavelength Temp Coefficientnm/℃0.280.280.28
Electrical



Power Conversion Efficiency%505050
Slope Efficiency/BarW/A≥1.1≥1.11.1
Threshold CurrentA4.54.54.5
Operating CurrentA0.160.16290
Operating Voltage/BarV≤2≤21.8
Thermal



Operating Temperature15 ~ 3515 ~ 3525
Storage Temperature0~550~550~55
Bar/Water Velocity/Barl/m0.3~0.50.3~0.50.3
Entrace Maximum Pressurepsi555555
Water Type-DI WaterDI WaterDI Water
Deionized Water Resistivity(DI)kΩ·cm200~500200~500200~500
Pure Water Filter Particlesμm<20<20<20

(9)   High-power Diode Laser Stacks – QCP Series

Optical


Center Wavelengthnm808808
Wavelength ToleranceW±3±10
Bar Output Power/Bar%30040
Number of Bars%2 ~ 2460
Total Output Powerμm-2400
Bar-to-Bar Spacing-0.4 ~ 1.80.9
Spectral Width (FWHM)-48
Pulse Widthm50-50010-100
Repetition Rate
1-2001-10
Fast-axis Divergence(FWHM)nm4040
Slow-axis Divergence(FWHM)mW1010
Wavelength Temp Coefficient
0.280.28
Electrical


Electro-optic Conversion Eff%5050
Slope Efficiency/BarW/A1.11.1
Threshold CurrentA2010
Operating CurrentA30050
Operating Voltage/BarV21.8
Thermal


Water Type-Pure WaterPure Water
Operating Temperature2525
Storage Temperature-40-85-40-85

(10)  High-power Diode Laser Devices – TO Series

Optical





MinTypicalMax
Center Wavelengthnm820830840
Wavelength Tolerancenm
±10
Output PowerW
1.0
Spectral Width(FWHM)nm
3.04.0
Wavelength Temp Coefficientnm/℃
0.3
Electrical



Electro-optic Conversion Eff%3642
Slope EfficiencyW/A1.051.1
Threshold CurrentA
0.380.45
Operating CurrentA
1.281.40
Operating VoltageV
1.82.2
Thermal



Operating Temperature02540
Storage Temperature
-20~70

SBN Series Diode Laser Chips/Bars/Stacks

We, a diode laser company, manufacture high-power diode lasers and systems in a wide range of output powers and wavelengths Including wafer growth and slicing, fiber coupling and bar stacking laser. More than 1000 models are for your choice. Established in 2011,  over 60 technicians and 2 scientists, 20 of them are PHD degree. Production site is 1000Class Lab Clean Room with 5000sqm. Our current turnover per year is about 20million US Dollars with 30% growth year on year. Our strengths are in talent employees, quality engineering, process control, product development and volume manufacturing.

1.  Bare Laser Chip/Bar

Optical

Central Wavelength755nm,808nm,830nm,905nm,940nm,976nm,1550nm
Wavelength Tolerance±10nm, ±5nm, ±3nm
Output Power2W,10W,20W,50W,100W,150W,200W,300W,500W,1000W
Working ModeCW/QCW/Single Mode
Number of Emitter1~60
Filling Factor30%~75%
Cavity Length1000um/1500um/2000um/3000um/4000um

Electrical

Working Current1~300A
Threshold Current0.5~50A
Working Voltage1.8~2.1V
Power Conversion Eff30%~60%

Thermal

Working Temp25℃
Storage Temp-30-80℃
Wavelength Temp Coefficient~0.3nm/℃

2.  Stack Array Laser Diodes

Optical

Central Wavelength755nmm, 808nm, 915nm, 940nm, 976nm, 1064nm
Wavelength Tolerance±10nm, ±5nm, ±3nm
Output Power Per Bar20W/40W/80W/100W/200W/300W~30000W
Number of Bars1~60pcs
Working ModeCW/QCW

Electrical

Working Current1~300A
Threshold Current0.5~50A
Working Voltage1~40V
Power Conversion Eff30%~60%

Optional functions: FAC lens, SAC lens.

Thermal

Working Temp-20~70℃
Storage Temp-30-80℃
Wavelength Temp Coefficient~0.3nm/℃
Cooling WayWater Cooled/TEC/Conduction Cooled/Air Cooled

STHT Series Diode Chips/Emitters/Bars/Arrays

1. Unmounted Single Diode Emitters and Bars

Semiconductor lasers are one of most of today’s industrial lasers. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

We have been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 808 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output

  • Unmounted single emitters up to 2W CW Power

  • Available wavelengths include 808nm and 980nm

Part No.WavelengthOutput PowerEmitter WidthCavity LengthWidth
STHT-CLDM-0808-0500-02 808±5nm500mW50µm600µm500µm
STHT-CLDM-0808-1000-02 808±5nm1W100µm900µm500µm
STHT-CLDM-0808-2000-02808±5nm2W100/150µm1500/1000µm500µm
STHT-CLDM-0980-0500-02980±10nm500mW50µm600µm500µm
STHT-CLDM-0980-1000-02980±10nm1W100µm900µm500µm
STHT-CLDM-0980-2000-02980±10nm2W150µm1000µm500µm
Unmounted BarsWavelengthOutput PowerOperation ModeFill FactorNumber of single emitters
STHT-LDAC1-0808-0020808±5nm20WCW20%19
STHT-LDAC1-0808-0040808±5nm40WCW30%19
STHT-LDAQ1-0808-0100808±5nm100WQCW87%100
STHT-LDAQ1-0808-0200808±5nm200WQCW71%58

2. Packaged Diode Single Emitters

LDM series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. Sintec packaged single emitters provide excellent reliability and performance.

  • Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm

  • Package designs include TO mounts, COS mounts, C-mounts and F-mounts

  • Provide beam shaping services like fast-axis compression according to customer demands

Part No.Wavelength

nm

Output Power(20°C)Operating CurrentOperating VoltagePackage
STHT-LDM-0635-500m635500mW≤1.35A≤2.3VC-Mount / TO3
STHT-LDM-0650-300m650300mW≤1.0A≤2.3VC-Mount / TO3
STHT-LDM-0670-300m670300mW≤1.0A≤2.3VC-Mount / TO3
STHT-LDM-0808-200m808200mW≤220mA≤2.0VTO56
STHT-LDM-0808-300m808300mW≤330mA≤2.0VTO56
STHT-LDM-0808-500m808500mW≤560mA≤2.0VTO9
STHT-LDM-0808-001W8081W≤1.24A≤2.0VTO9
STHT-LDM-0808-002W8082W≤2.1A≤2.0VCoS/ F-Mount /C-Mount
STHT-LDM-0808-003W8083W≤3.3A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0808-005W8085W≤5.5A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDMP-0808-007W8087W (ms pulse)≤7.8A≤3.0VTO56
STHT-LDM-0808-008W8088W≤10A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0830-001W8301W≤1.3A≤2.0VCoS/ C-Mount
STHT-LDMP-0830-005W8305W (ms pulse)≤5.30A≤3.0VTO56
STHT-LDM-0915-010W91510W≤11A≤2.2VCoS/ F-Mount
STHT-LDM-0940-003W9403W≤3.2A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0980-500m980500mW≤700mA≤2.0VTO9
STHT-LDM-0980-001W9801W≤1.3A≤2.0VTO9
STHT-LDM-0980-002W9802W≤2.3A≤2.0VCoS/ C-Mount
STHT-LDM-0980-003W9803W≤3.6A≤2.0VCoS/ C-Mount
STHLDMP-980-005W9805W (ms pulse)≤5.8A≤3.0VTO56

3. Diode Laser Packaged Bars and Arrays

LDA series high power packaged bars provide OEM customers with scalable power up to kilowatts for pumping, industrial, medical and applications. The packaged laser bars can be configured for enhanced brightness through stacking, scaled linearly or vertically for optimized light and material integration. LDA series offer:

  • Wavelengths at 808nm to 1100nm range

  • Modular and Compact design for ease of integration

  • Up to 100W CW and 300W QCW laser diode bars for high brightness

  • Packaged 10mm laser diode bar, various standard bar configurations (custom bar configurations available on request)

Packaged BarsCenter WavelengthOutput PowerOperation ModeCooling
STHT-LDAC1-0808-020W808nm20WCWConduction-cooled
STHT-LDAC1-0808-040W808nm40WCWConduction-cooled
STHT-LDAC1-0808-060W808nm60WCWConduction-cooled
STHT-LDAC1-09xx-060W9xxnm60WCWConduction-cooled
STHT-LDAC1-1064-040W1064nm40WCWConduction-cooled
STHT-LDAC1-0808-040W808nm40WCWMicrochannel-cooled
STHT-LDAC1-0808-060W808nm60WCWMicrochannel-cooled
STHT-LDAC1-0808-100W808nm100WCWMicrochannel-cooled
STHT-LDAC1-09xx-060W9xxnm60WCWMicrochannel-cooled
STHT-LDAC1-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAQ1-0808-100W 808nm100WQCWConduction-cooled
STHT-LDAQ1-0808-200W 808nm200WQCWConduction-cooled
STHT-LDAQ1-0808-300W 808nm300WQCWConduction-cooled
Vertical ArraysCenter WavelengthPower per barOperation ModeCooling
STHT-LDAC2-0808-xxx808nm40-100WCWMicrochannel-cooled
STHT-LDAC2-09xx-xxx9xxnm40-100WCWMicrochannel-cooled
STHT-LDAC2-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAQ2-0808-xxx808nm100-300WQCWConduction-cooled
STHT-LDAQ2-0940-xxx940nm100-200WQCWConduction-cooled
Horizontal ArraysCenter WavelengthPower per barOperation ModeCooling
STHT-LDAC3-0808-xxx808nm40-100WCWMicrochannel-cooled
STHT-LDAC3-09xx-xxx9xxnm40-100WCWMicrochannel-cooled
STHT-LDAC3-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAC3-0808-xxx808nm40-100WCWMacrochannel-cooled
STHT-LDAC3-09xx-xxx9xxnm40-100WCWMacrochannel-cooled
STHT-LDAC3-1064-040W1064nm40WCWMacrochannel-cooled
STHT-LDAQ3-0808-xxx808nm100-300WQCWMacrochannel-cooled
STHT-LDAQ3-0940-xxx940nm100-200WQCWMacrochannel-cooled
  • 9xxnm center wavelength includes 915nm/940nm/980nm.

  • Please contact us to discuss your specific requirements.

4. Diode Laser Arrays for Hair Removal

The vertical arrays specially designed for hair removal application, can stack up to 10 packaged laser bars to form a high power diode laser assembly. Each of these laser bars individually provides up to 100watts in CW mode. The small gaps between the laser bars make the module obtain maximum brilliance from the arrays, enabling the module to work with high efficiency

  • Power up to 1000W

  • Compact designs

  • Reliable package with hard solder

Part No.STHT-LDAQ2-0808-300STHT-LDAQ2-0808-500STHT-LDAQ2-0808-800STHT-LDAQ2-0808-1000
Operation ModeQCWQCWQCWQCW
Center Wavelength nm808 ± 10808 ± 10808 ± 10808 ± 10
Output Power W3005008001000
Bar Numbers5/ 610810
Operating Current A≤50≤50≤100≤100
Operating Voltage V/bar≤2≤2≤2≤2
Pulse Width ms≤400≤400≤200≤200
Duty Cycle %≤40≤40≤20≤20
Bar pitch mm222.82.8
Emitting Area mm10×1110×19.510x2010x25.5
Operating Temp. ℃15~3515~3515~3515~35
Storage Temp. ℃-10~50-10~50-10~50-10~50
Flow Rate L/min>4>4>4>4

STR Series Diode Chips/bars

1. Single Emitter

Single-emitter laser diode (SE) chips are the basic built block for high-power and high-brightness semiconductor laser modules. We manufacture single chips with a variety of output powers and wavelengths.

diode chip, single emitter

Part numberWavelength, nmOutput powerCurrent/voltageEmitting width, umDivergence, degSize, um
STR-638A-110-1-1.5-SE6381W1.4A/2.1V1108/351500x400x150
STR-755A-350-8-2.5-SE7558W8A/1.9V3509/382500x500x150
STR-808A-150-3-1-SE8083W3A/1.9V1508/241000x500x150
STR-808A-190-10-4-SE80810W10A/1.8V19010/384000x500x150
STR-808A-350-10-2.5-SE80810.5W10A/1.8V3508/362500x500x150
STR-880A-190-10-4-SE88010W12A/1.8V1908/322500x500x150
STR-880A-350-10-2.5-SE8809.8W10A/1.8V3508/342500x500x150
STR-905A-74-25-0.75-SE90525W7A/7.2V7413/30750x400x150
STR-905A-150-50-0.75-SE90550W14A/7.6V15012/31750X400X150
STR-905A-200-75-0.75-SE90575W20A/8.4V20012/30750X400X150
STR-905B-200-25-0.75-SE90525W20A/3.8V20014750X600X150
STR-905-38-15-0.75-SE90515W5A/9.2V3835/30750X400X150
STR-905C-70-25-0.75-SE90525W8A/8.2V7017/30750X400X150
STR-905C-300-75-0.75-SE90575W22A/9.5V30012/30750x400x150
STR-905D-300-100-0.75-SE905100W22A/11V30013/30750x400x150
STR-915A-96-12-4.8-SE91512W12A/1.6V9610/264800x500x150
STR-915A-190-20-4-SE91520W20A/1.7V19010/264000x500x150
STR-940A-96-12-4.8-SE94012W12A/1.6V9610/264800x500x150
STR-940A-190-20-4-SE94020W20A/1.7V19010/264000x500x150
STR-976A-96-10-4.8-SE97610W10A/1.8V969/274800x500x150
STR-976A-96-12-4.8-SE97612W12A/1.6V9610/264800x500x150
STR-976A-96-13-4-SE97613W12.5A/1.5V968/284000x500x150
STR-976A-190-15-4-SE97615.5W15A/1.6V19010/294000x500x150
STR-976A-190-20-4-SE97620W20A/1.7V19010/264000x500x150
STR-1064A-190-10-4-SE106410W14A/0.9V19010/304000x500x150
STR-1064A-350-10-2.5-SE106410W13A/1.6V35010/292500x500x150
STR-1470A-96-1.5-1-SE14701.5W4A/1.4V9611/311000x500x150
STR-1470A-96-3-2-SE14703W9A/1.5V9611/282000x500x150
STR-1550A-96-1.5-1-SE15501.5W4A/1.4V9611/311000x500x150
STR-15500A-96-3-2-SE15503W9A/1.5V9611/282000x500x150

2. Bare Bars

Bare bar is an array of individual semiconductor laser chips, with combined output power from dozens of Watts to a few hundred Watts. Our proprietary facet passivation process ensures the reliability required by the most stringent applications.

diode bar

In the following table, WL means wavelength, I/V means operation current/voltage, N means the numbers of emitters, P/width means period (um)/emitter width (um), L/W/T means length/width/thickness of the bar.

Part numberWL nmModePowerI/VNP/Width umFillingL/W/T um
STR-755A-48-80-23-1.5-BAR755QCW80W86A/1.9V23499/19048%1500x10000x150
STR-808A-30-50-19-1-BAR808CW50W45A/1.7V19500/15030%1000x98000x150
STR-808A-48-100-23-1.5-BAR808CW100W88A/1.75V23400/19048%1500x9800x150
STR-808A-72-300-34-1.5-BAR808QCW300W190A/1.85V34290/21072%1500x10000x150
STR-940A-30-100-19-2-BAR940CW100W95A/1.65V19500/15030%2000x10000x150
STR-940A-50-200-24-3-BAR940CW200W195A/1.63V24400/20050%3000x10200x150
STR-940A-76-600-40-2-BAR940QCW600W600A/1.8V40250/19076%2000x10400x150
STR-976A-10-35-5-4-BAR976CW35W35A/1.7V51000/10010%4000x5000x150
STR-1470A-18-8-6-2-BAR1470CW8W24A/1.4V6400/9618%2000x3000x150

STL Series Diode Laser Chips & Bars

diode laser chip

  • High electrical-optical conversion efficiency

  • >20000 hours lifetime

  • Customized products available

  • Short lead time

  • Quick response

Part numberWavelengthStructureOperationPowerOperation current/voltage
STL-UMC-190-915-TE-18-4.0915nmSingle chipCW18W19.5A/1.8V
STL-UMC-95-915-TE-10-4.0915nmSingle chipCW10W11A/1.7V
STL-UMC-28-915-TE-0.5-0.5915nmSingle chipCW500mW0.55A/2V
STL-UMC-200-905-TE-75-1.0905nmSingle chipQCW75W30A/6.3V
STL-UMC-135-905-TE-50-1.0905nmSingle chipQCW50W23A/6.3V
STL-UMC-70-905-TE-25-1.0905nmSingle chipQCW25W10A/6.3V
STL-UMC-28-896-TE-0.5-1.0896nmSingle chipCW0.5W0.55A/1.8V
STL-UMC-200-880-TE-10-4.0880nmSingle chipCW10W10A/1.65V
STL-UMC-100-880-TE-6-4.0880nmSingle chipCW6W6.5A/1.65V
STL-UMC-47-830-TE-2.0-2.0830nmSingle chipCW2W2A/1.8V
STL-UMC-200-808-TE-10-4.0808nmSingle chipCW10W10A/1.75V
STL-UMC-390-808-TE-10-2.0808nmSingle chipCW10W10A/1.75V
STL-UMC-200-808-TE-8-4.0808nmSingle chipCW8W8.5A/1.75V
STL-UMC-200-808-TE-5-2.0808nmSingle chipCW5W4.8A/1.75V
STL-UMC-100-808-TE-3-2.0808nmSingle chipCW3W2.8A/1.75V
STL-UMC-100-785-TE-2-2.0785nmSingle chipCW2W2.2A/1.75V
STL-UMC-190-976-TE-20-4.0976nmSingle chipCW20W23A/1.8V
STL-UMC-95-976-TE-12-4.0-D2976nmsingle chipCW12W13A/1.65V
STL-UMC-95-976-TE-12-4.0980nmSingle chipCW12W13A/1.75V
STL-UMC-190-940-TE-20-4.0940nmSingle chipCW20W23A/1.8V
STL-UMC-95-940-TE-12-4.0940nmSingle chipCW12W13A/1.75V
STL-UMC-390-808-TE-10-2.0808nmSingle chipCW10W10A/1.75V
STL-UMC-100-785-TE-2-2.0785nmSingle chipCW2W2.2A/1.75V
STL-UMB-10-5-976-TE-40-4.0976nmbarCW40W41A/1.6
STL-UMB-80-37-940-TE-1000-4.0940nmbarQCW1000W550A/3.6V
STL-UMB-35-24-940-TE-200-3.0940nmbarQCW200W212A/1.65V
STL-UMB-75-60-808-TE-500-1.5808nmbarQCW500W460A/2.1V
STL-UMB-75-30-808-TE-150-1.5808nmbarQCW150W145A/1.9V
STL-UMB-50-47-808-TE-100-1.5808nmbarCW100W105A/1.8V
STL-UMB-50-47-808-TE-60-1.0808nmbarCW60W63A/1.8V
STL-UMB-50-47-808-TE-100-1.5-2808nmbarCW100W100A/1.8V
STL-UMB-75-30-808-TE-150-1.5808nmbarQCW150W145A/1.9V
STL-UMB-75-60-808-TE-300-1.5808nmbarQCW300W280A/1.9V
STL-UMB-75-60-808-TE-300-1.5-D1808nmbarQCW300W280A/1.9V
STL-UMB-75-60-808-TE-200-1.0808nmbarQCW200W190A/1.9V
STL-UMB-30-19-808-TE-50-1.0808nmbarCW50W48.5A/1,8v

STD Series Laser Chips, Bars & Stacks

1. STD Series Diode Laser Chips & Bars

Features:

  • High output power

  • High electrical-optical conversion efficiency

  • High brightness

  • High reliability

Technical Advantages:

  • High efficient epitaxial structure design

  • High-quality epitaxial material growth

  • Special passivation method for cavity surface

laser diode chip

Part numberWavelengthPowerOperation current/voltageRemark
STD-UMC-100-808-TE-6-4.0808nm6W5.7A/1.75VCW single chip
STD-UMC-190-808-TE-10-4.0808nm10W9.5A/1,75CW single chip
STD-UMC-190-808-TE-12-4.0808nm12W10.5A/1.75VCW single chip
STD-UMC-100-915-TE-12-4.5915nm12W10.5A/1.62VCW single chip
STD-UMC-160-915-TE-18-5.0915nm18W17.5A/1.65VCW single chip
STD-UMC-190-915-TE-22-5.0915nm22W20.0A/1.68VCW single chip
STD-UMC-230-915-TE-25-5.0915nm25W24.5A/1.70VCW single chip
STD-UMC-100-945-TE-12-4.5945nm12W11.5A/1.70VCW single chip
STD-UMC-160-945-TE-18-5.0945nm18W17.5A/1.70VCW single chip
STD-UMC-190-945-TE-22-5.0945nm22W21.5A/1.70VCW single chip
STD-UMC-230-945-TE-25-5.0945nm25W25.0A/1.70VCW single chip
STD-UMC-100-975-TE-12-4.5975nm12W12.5A/1.52VCW single chip
STD-UMC-100-975-TE-15-4.5975nm15W16.0A/1.55VCW single chip
STD-UMC-190-975-TE-22-5.0975nm22W23.5A/1.55VCW single chip
STD-UMC-230-975-TE-25-5.0975nm25W27.0A/1.55VCW single chip
STD-UMC-230-975-TE-30-5.5975nm30W33.0A/1.55VCW single chip
STD-UMB-30-19-808-TE-50-1.5808nm50W42.0A/1.80VCW bar
STD-UMB-50-47-808-TE-100-1.5808nm100W92.0A/1.80VCW bar
STD-UMB-50-47-940-TE-120-2.0940nm120W115A/1.65VCW bar
STD-UMB-50-47-976-TE-200-4.0976nm200W195A/1.55VCW bar
STD-UMB-75-37-808-TE-300-1.5808nm300W250A/2.00VQCW bar

2. Pump Modules & Stacks

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

2.1 Pump Modules

laser diode chips laser diode chip stack

Part numberStructureLaser powerLaser wavelength
STD-HS12Macro channel stack600W-16500W760nm-1100nm
STD-GS20Conduction cooling stack4000W-1000W760nm-1100nm
STD-L5Macro channel horizontal stack300W-3000W760nm-1100nm
STD-E27Macro channel stack4000W-10000W760nm-1100nm
STD-MAMicro channel stack2500W-15000W760nm-1100nm
STD-HM7Whole micro channel stack700W-3500W760nm-1100nm

(1) Macro channel stack STD-HS12diode chip, bar, stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

Wavelength760-1100nm
Peak power, W600120072001000016500
Operation modeQCW
Operation current, A5095550450450
Duty cycle up to, %2515510.4
Number of bars12121220Up to 33
Bar to bar pitch, mm1.21.21.20.930.4
Electric/optic conversion efficiency, %58Up to 60565656
Fast axis divergence FWHM, deg35, optional FAC<435
Slow axis divergence FWHM. deg10
Dimension, mm28.6x24x11.5mm

Typical pulse energy:

Pulse widthFrequency (Hz)Iop
12345678910
10 ms131312.712.751312.7131312.912.995A
20 ms212121.721.521.421.72121.42020.985A
30 ms3131.53232------60A
40 ms434142-------60A
50 ms5351---------
60 ms6159.5---------
70 ms70----------
80 ms50----------
90 ms54----------
100ms60----------

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

(2) Conduction cooling stack STD-GS20diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast-axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping, hair removal etc.

Wavelength760-1100nm
Peak power, W4000600010000
Operation modeQCWQCWQCW
Operation current, A200280450
Duty cycle up to, %1.210.4
Pulse width, usUp to 1000600200
Number of bars20
Bar to bar pitch, mm0.73
Electric/optic conversion efficiency, %525658
Fast axis divergence FWHM, deg35, optional FAC < 4
Slow axis divergence FWHM. deg10
Dimension, mm37.5x10x9

(3) Macro channel horizontal stack STD-L5diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Contact size

  • Used for pumping

Wavelength760-1100nm
Peak power, W30015003000
Operation modeCWQCWQCW
Operation current, A55280550
Number of bars5
Bar to bar pitch, mm0.73
Electric/optic conversion efficiency, %565658
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm70x14x10

(4) Macro channel stack STD-E27diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping

Wavelength760-1100nm
Peak power, W4000600010000
Operation modeQCWQCWQCW
Operation current, A200280450
Duty cycle up to, %850.4
Pulse width, usUp to 1000600200
Number of bars20
Bar to bar pitch, mm2.21
Electric/optic conversion efficiency, %525658
Fast axis divergence FWHM, deg35, optional FAC < 4
Slow axis divergence FWHM. deg10
Dimension, mm37.5x12x13.4

(5) Whole micro channel stack STD-HM7laser diode chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Narrow spectrum

  • Filtered water, alternative cooling fluids

  • Used for laser pumping & hair removal

Wavelength760-1100nm
Peak power, W70021003500
Operation modeQCWQCWQCW
Operation current, A100280450
Duty cycle up to, %4084
Pulse width, usUp to 1000600200
Number of bars7
Bar to bar pitch, mm2.0
Electric/optic conversion efficiency, %605658
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm30x13x4.95

2.2 Stacks for Hair Removal

laser diode chip & stack

Part numberStructureLaser powerLaser wavelength
STD-HH05Macro channel stack300W/500W760nm-1100nm
STD-HL07Macro channel stack300W-700W760nm-1100nm
STD-HS12Macro channel stack600W-1200W760nm-1100nm

(1) Macro channel stack STD-HH05diode laser chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength760-1100nm
Peak power, W300500
Operation modeQCWQCW
Operation current, A9595
Duty cycle up to, %2010
Pulse width, us200100
Number of bars35
Bar to bar pitch, mm52.9
Electric/optic conversion efficiency, %5858
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm42x25.27x20

Operation Conditions


STD-HH05-808STD-HH03-300-808
Peak power per bar, W1008060100
Operation current, A95806595
Pulse width, msMax. frequency, Hz
1030404040
2010152020
3010121313
4010101010
505688
604566
803454
1002342
200-121
400--1-

(2) Macro channel stack STD-HL07laser diode chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength760-1100nm
Peak power, W300500600700
Operation modeQCWQCWQCWQCW
Operation current, A50509595
Duty cycle up to, %40401010
Pulse width, usUp to 400Up to 400100100
Number of bars601067
Bar to bar pitch, mm2.22.23.42.9
Electric/optic conversion efficiency, %58585858
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm39x40x36

Operation Conditions


STD-HL06-600-808
STD-HL07-700-808
STD-HL06-300-808
STD-HL10-500-808
Peak power per bar, W100806050
Operation current, A95806550
Pulse width, msMax. frequency, Hz
10304040440
2010152020
3010121313
4010101010
505688
604566
803455
1002344
200-122
400--11

(3) Macro channel stack STD-HS12diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assembly

  • Optional fast-axis collimation

  • Used for hair removal & laser pumping

Wavelength760-1100nm
Peak power, W600120072001000016500
Operation modeQCW
Operation current, A5095550450450
Duty cycle up to, %2515510.4
Pulse width, us25100.60.40.2
Number of bars12121220Up to 33
Bar to bar pitch, mm1.21.21.20.730.4
Electric/optic conversion efficiency, %58Up to 60565656
Fast axis divergence FWHM, deg35, optional FAC<435
Slow axis divergence FWHM. deg10
Dimension, mm28.6x24x11.5mm

STD-HS12-1200-808 typical pulse energy (J/cm2):

Pulse widthFrequency (Hz)Iop
12345678910
10 ms131312.712.751312.7131312.912.995A
20 ms212121.721.521.421.72121.42020.985A
30 ms3131.53232------60A
40 ms434142-------60A
50 ms5351---------
60 ms6159.5---------
70 ms70----------
80 ms50----------
90 ms54----------
100ms60----------

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

STO Series High Power Laser Diode Bars/Stacks

diode pump gain module

1. Laser Diode Bars

ModelSTO-CS20STO-CS40STO-CS60STO-CS100QSTO-CS200QSTO-CS300Q
Output Power20W40W60W100W200W300W
Wavelength808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm
Operation ModeCWCWCWQCWQCWQCW
Duty CircleCWCWCW≤5%≤5%≤5%
Pulse WidthCWCWCW≤300μs≤300μs≤300μs
Typical Current25A40A60A100A180A260A

2. Laser Diode Horizontal Stacks

STO-HSCW Series, CW Laser Diode Horizontal Stacks

ModelSTO-HSCW-20-3STO-HSCW-20-4STO-HSCW-40-3STO-HSCW-40-4
Output Power60W80W120W160W
Typical Current25A25A38A38A
Operation Voltage<6V<8V<6V<8V

Note: STO-HSCW-20/40-N can be customized with N≤20. The total output power is 20/40 times N.

STOU-HSQCW Series QCW Laser Diode Horizontal Stacks

ModelSTO-HSQCW-100~300-N
Output PowerQCW 100W~300W*N
Repetition Rate0-1000Hz
Pulse Width50-300μs
Duty Circle≤10% or ≤20%

Note: STO-HSQCW-100~300-N can be customized. Single unit can be mounted with 1, 2 or 3 pcs of laser diode bar. Typical wavelength of the diode bar is 805+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

Specifications of Diode Bar STO-HSCW-40-4

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 40

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): ≤22

  • Operating Voltage (V): ≤8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75E

Specifications of Diode Bar STO-HSCW-20-4:

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 20

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): £18

  • Operating Voltage (V): £8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75H

3. STO-VS Series CW/QCW Laser Diode Vertical Stacks


STO-VSQCW-MI/MA-100~300-NSTO-VSCW-MI/MA-40~100-N
Single Bar Power100W,150W,200W,300W QCW40W,60W,100W CW
Bar Total / StackN=1~20N=1~20
Bar Pitch0.5mm~2mm1.8mm
Wavelength808nm808nm

Note: STO-VSQCW/CW-MI/MA-100~300-N can be customized. We provide micro channel water cooling technology and high reliability macro channel water cooling technology. Typical wavelength of the diode bar is 808+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

4. Reliable QCW Diode Laser Stacks in Arc Heatsink

We make the QCW laser into an arc, which is beneficial to the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on requirement

  • Output power: 500 - 4800W

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient:High output power up into the 4800W.

  • Compact:Arc and lightweight design are easily integrated into pump module.

  • Robust:Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Excitation light source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: pump source for solid-state and fiber lasers.

ModelSTO-ARCQCW-MA-100~500-N
Optical parameters
Output power (W)QCW 100~500*N
Center wavelength at 25 °C (nm)808
Number of bars in one stack1~20
Bar pitch (mm)0.8~3
Center wavelength variation at 25 °C (nm)±3/±10
Typical spectral bandwidth (FWHM)<3
Divergence (degree) (FWHM)<39⊥<10‖
PolarizationTE
Wavelength shift (nm/℃)~0.28
Electrical parameters
Working modeQCW
Maximum duty cycle (%)£2%
Pulse length (us)50~1000
Frequency (Hz)1~1000
Operation current (A)<=100~500
Operating voltage (V)<=2*N
Typical slope (W/A)>1.1
Electro-optic conversion efficiency (%)>50
Thermal parameters
Operation temperature (℃)-40~60
Storage temperature (℃)-50~85
Storage humidity (%)<70
CoolingTEC/air cooling

Note:

  • STO-ARCQCW-MA-100~500-N represent N*100-500W laser stack which is mounted on an arc heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

5. Reliable QCW Diode Laser Stacks in Annular Heatsink

The QCW laser is made into a ring, which improves the uniformity of the pump while making use of the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient: High output power up to 4800W.

  • Compact: Arc and lightweight design is easily integrated into pump module.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

ModelSTO-ARCQCW-MA-100~500-N
Optical parameters
Output power(W)QCW 100~500*N
Center wavelength at 25 °C(nm)808
Number of bars in one stack1~40
Bar pitch(mm)0.8~3
Center wavelength variation at 25 °C(nm)±3/±10
Typical spectral bandwidth (FWHM)<3
Divergence(degree)(FWHM)<39⊥<10‖
PolarizationTE
Wavelength shift(nm/℃)~0.28
Electrical parameters
Working modeQCW
Maximum duty cycle(%)£2%
Pulse length(us)50~1000
Frequency(Hz)1~1000
Operation current(A)<=100~500
Operating voltage(V)<=2*N
Typical slope(W/A)>1.1
Electro-optic conversion efficiency(%)>50
Thermal parameters
Operation temperature(℃)-40~60
Storage temperature(℃)-50~85
Storage humidity(%)<70
Coolingpassively cooled/actively cooled
Flow rate per bar(L/min)0.3-0.8

Note:

  • STO-ARCQCW-MA-100~500-N represents N*100-500W laser stack which is mounted on an annular heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

  • The duty cycle is usually less than 2%. In case of special high duty cycle requirements, the laser structure can be customized. Then duty circle up to 20%.

6. Vertical QCW Diode Laser Stacks

We use Gold and Tin to assemble our vertical QCW stacks. This technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

  • FAC available

Benefits

  • Customized upon request to adjust pumping structure.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

  • Duty circle up to 20%.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, used as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

ModelSTO-VSQCW-MI-MA-100~500-NSTO-VSQCW-MI-MA-100~500-N-FAC
Optical parameters
Output power(W)QCW 100~500*N
Output power after collimation(W)
90~450*N
Center wavelength at 25 °C(nm)808808
Number of bars in one stack1~201~20
Bar pitch(mm)0.8~30.8~3
Center wavelength variation at 25 °C(nm)±3/±10±3/±10
Typical spectral bandwidth (FWHM)<3<3
Typical fast axis divergence 95 %(°)66
Typical slow axis divergence 95 %(°)1010
Fast axis divergence (full power)(°)
<0.5
PolarizationTETE
Wavelength shift(nm/℃)~0.28~0.28
Electrical parameters
Working modeQCWQCW
Maximum duty cycle(%)£20%£20%
Pulse length(us)50~100050~1000
Frequency(Hz)1~10001~1000
Operation current(A)<=100~500<=100~500
Operating voltage(V)<=2*N<=2*N
Typical slope(W/A)>1.1>1.1
Electro-optic conversion efficiency(%)>50>50
Thermal parameters
Operation temperature(℃)-40~60-40~60
Storage temperature(℃)-50~85-50~85
Storage humidity(%)<70<70
Coolingpassively cooled/actively cooledpassively cooled/actively cooled
Flow rate per bar(L/min)0.3-0.80.3-0.8

Note:

  • STO-VSQCW-MI/MA-100~500-N. MI means micro channel cooler as a heatsink which needs deionized water. MA means passively cooled or pure water cooled heatsink.

  • STO-VSQCW-MI/MA-100~500-N. 100~500 represents that the laser power per bar can be 100W, 200W, 300W or 500W.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • Heat sink structure can be customized according to customer's special requirements

7. Vertical CW Diode Laser Stacksdiode stack

Our vertical stacks can be used to increase the optical output power of your diode lasers To do so, we stack up to 12 mounted laser bars to form a diode laser stack or an assembly. Each of these laser bars individually supplies up to 100W in CW mode. Because of the small gaps between the laser bars, you obtain maximum brightness from the stacks, enabling you to work highly effectively. You can choose between laser diode stacks with a fast-axis (FA) or without collimation.

Feature

  • High optical output power of 100W CW per bar

  • Wavelength: 808 nm ±3nm

  • High efficiency, low divergence

  • Lifetime >10,000 hours, high reliability

  • Collimation: fast axis / without

Application

  • Material processing

  • Medical technology

  • Pumping source for fiber lasers and solid-state lasers.

ModelSTO-VSCW-MI-40~100-NSTO-VSCW-MI-40~100-N-FAC
Optical parameters
Output power(W)CW 40~100*N
Output power after collimation(W)
36~90*N
Center wavelength at 25 °C(nm)808808
Number of bars in one stack1~121~12
Bar pitch(mm)1.8/0.8~31.8/0.8~3
Center wavelength variation at 25 °C (nm)±3/±10±3/±10
Typical spectral bandwidth (FWHM)<3<3
Typical fast axis divergence 95 %(°)66
Typical slow axis divergence 95 %(°)1010
Fast axis divergence (full power)(°)
<0.5
PolarizationTETE
Wavelength shift(nm/℃)~0.28~0.28
Electrical parameters
Operation current(A)<=40~100<=40~100
Operating voltage(V)<=2*N<=2*N
Typical slope(W/A)>1.1>1.1
Electro-optic conversion efficiency(%)>50>50
Thermal parameters
Operation temperature(℃)20~3020~30
Storage temperature(℃)0~550~55
Storage humidity(%)<70<70
Coolingdeionized waterdeionized water
Flow rate per bar(L/min)0.3-0.80.3-0.8

Note:

  • STO-VSCW-MI-40~100-N. MI represents we use micro channel cooler as a heatsink which needs deionized water.

  • STO-VSCW-MI-40~100-N. 40~100 represents the laser power per bar can be 40W, 60W or 100W. 100W bar only can be used in cosmetic applications.

8. Laser Diode Stacks for Hair Removal

We supply various diode stacks for laser hair removal. These stacks can custom-designed and –made according to your specific requirements.

laser hair removal

Model No.STO-VS-Ml-100-N
ApplicationLaser hair removal handpiece
Operation modeCW
Bar numbers in one stackN=1-20 bars
Power per sub-mounts100W
Central wavelength at 25℃810nm/755nm/1064nm
Typical Operation current90A
Maximum Operation current100A

STJ Series Laser Emitters, Bars & Stacks

1. Unmounted Laser Emitters & Bars

Thanks to precise controls, our laser bars, semi-bars and single emitters meet the highest quality standards of our customers. We produce our semiconductor materials under the strictest quality controls. We work only with state-of-the-art epitaxy, processing and facet coating technology. Our bars, semi-bars and single emitters for high-power diode lasers therefore meet the most exacting demands: They are extremely reliable, efficient and durable.

Our semiconductor products are easily assembled using standard soldering methods. The material supports both soft solder (indium) and hard solder (gold/tin). We deliver our laser bars to you with emitter structures separated on the p-side as standard. On request, we can also produce bars with continuous p-side metalization and adapted facet coatings, using low AR coatings for the assembly of external resonators.

diode laser chip bar

Product feature

  • Wavelength: 760 - 1060nm

  • Output power: 6 - 500W

  • Operation mode: CW / QCW

  • Filling factor: - - 75%

  • Resonator length: 0.6 - 4.0mm

Benefits

  • Highest quality: We strictly monitor the production of our semiconductor products in clearly defined processes.

  • Powerful: High, reliable output power and ideal beam characteristics.

  • Economical: Our semiconductors are very efficient and are characterized by a long service life.

Fields of Application

  • Industry: Semiconductors for high-power diode lasers in direct material processing, for heating or lighting. Semiconductors as pumping sources for fiber and solid-state lasers. Use in printing technology.

  • Medicine: Esthetics, dermatology and surgery.

Technical Specifications

  • InGaAs-based semiconductors

  • Optical output power: 6watts to 200watts cw and 500watts qcw

  • Standard wavelengths: 760 to 1060nanometers (others available on request)

  • Fill factors: 10%, 20%, 30%, 50%, 75% (others available on request)

  • Resonator lengths: 0.6mm, 1.0mm, 1.5mm, 2.0mm, 4.0mm (others available on request)

  • Optional: low AR coating (typically < 0.3%)

  • Optional: continuous metallization

Part numberWavelength, nmOutput power, WOperation modeFilling factor, %Resonator length, mm
STJ-JDL-BAB-30-19-760-TE-40-1.576040CW301.5
STJ-JDL-BAB-30-19-792-TE-60-2.079260CW302.0
STJ-JDL-BAE-25-100-808-TM-6-4.08086CW-4.0
STJ-JDL-BAE-33-200-808-TM-8-4.08088CW-4.0
STJ-JDL-BAE-33-200-808-TM-10-4.080810CW-4.0
STJ-JDL-BAB-30-19-808-TE-20-0.680820CW300.6
STJ-JDL-BAB-30-19-808-TE-40-1.080840CW301.0
STJ-JDL-BAB-50-47-808-TE-40-1.080840CW501.0
STJ-JDL-BAB-20-19-808-TE-50-1.580850CW201.5
STJ-JDL-BAB-30-19-808-TE-50-1.580850CW301.5
STJ-JDL-BAB-20-19-808-TE-60-2.080860CW202.0
STJ-JDL-BAB-30-19-808-TE-60-2.080860CW302.0
STJ-JDL-BAB-50-47-808-TE-60-1.580860CW501.5
STJ-JDL-BAB-50-47-808-TE-80-2.080880CW502.0
STJ-JDL-BAB-75-62-808-TE-300-1.5808300QCW751.5
STJ-JDL-BAB-75-37-880-TE-500-1.5880500QCW751.5
STJ-JDL-BAB-50-23-905-TE-200-4.0905200CW504.0
STJ-JDL-BAB-30-19-915-TE-40-1.091540CW301.0
STJ-JDL-BAB-20-19-915-TE-60-1.591560CW201.5
STJ-JDL-BAB-20-19-915-TE-80-2.091580CW202.0
STJ-JDL-BAB-30-19-915-TE-80-2.091580CW302.0
STJ-JDL-BAB-50-23-915-TE-200-4.0915200CW504.0
STJ-JDL-BAB-20-19-940-TE-60-1.594060CW201.5
STJ-JDL-BAB-30-19-940-TE-60-1.594060CW301.5
STJ-JDL-BAB-20-19-940-TE-80-2.094080CW202.0
STJ-JDL-BAB-30-19-940-TE-80-2.094080CW302.0
STJ-JDL-BAB-50-47-940-TE-80-1.594080CW501.5
STJ-JDL-BAB-50-47-940-TE-120-2.0940120CW502.0
STJ-JDL-BAB-50-23-940-TE-200-4.0940200CW504.0
STJ-JDL-BAB-50-45-940-TE-200-4.0940200CW504.0
STJ-JDL-BAB-75-37-940-TE-300-1.5940300QCW751.5
STJ-JDL-BAB-20-19-976-TE-60-1.597660CW201.5
STJ-JDL-BAB-30-19-976-TE-60-1.597660CW301.5
STJ-JDL-BAB-20-19-976-TE-80-2.097680CW202.0
STJ-JDL-BAB-30-19-976-TE-80-2.097680CW302.0
STJ-JDL-BAB-50-47-976-TE-80-1.597680CW501.5
STJ-JDL-BAB-50-47-976-TE-120-2.0976120CW502.0
STJ-JDL-BAB-50-23-1020-TE-120-2.01020120CW502.0
STJ-JDL-BAB-50-23-1020-TE-200-4.01020200CW504.0
STJ-JDL-BAE-17-090-1060-TE-10-4.0106010CW
4.0
STJ-JDL-BAB-30-19-1060-TE-40-1_0106040CW301.0
STJ-JDL-BAB-30-19-1060-TE-60-1_5106060CW301.5
STJ-JDL-BAB-20-19-1060-TE-80-2.0106080CW202.0
STJ-JDL-BAB-50-23-1060-TE-120-2_01060120CW502.0
STJ-JDL-BAB-50-23-1060-TE-200-4_01060200CW504.0
STJ-JDL-BAB-50-47-1060-TE-250-1.51060250QCW501.5
STJ-JDL-BAB-75-37-1060-TE-350-1.51060350QCW751.5

2. Mounted Diode Bars & Single Emitters

You can choose between CW and QCW operation. We offer standard wavelengths of 808 nm, 940 nm and 980 nm. On request, we can optimize diode lasers for other wavelengths thanks to the flexibility of our own semiconductor production facility. You also receive different emission heights in standardized packages. The collimation is available in Fast-Axis (FA) only or in Fast-Axis (FA/SA).

Our patented CN design means that the bars of our mounted diode lasers are cooled on both sides. This means you can achieve thermal resistances that are very close to those of a microchannel heat sink. Our diode lasers also deliver high output power and a low smile.diode laser chip, bar, stack

Product feature

  • Wavelength: 808 - 1470nm

  • Output power: 23 - 300W

  • Operation mode: CW / QCW

  • Cooling: actively cooled / passively cooled

  • Collimation: fast axis / fast axis and slow axis / without

  • Heatsink: actively cooled / CN / CS

Benefits

  • Maximum efficiency: High optical output power of 8 ­­W to 200 W CW and 300 W QCW.

  • Reliable: Long lifetime through predominant use of our semiconductor lasers.

  • Versatile: Flexible integration into different systems.

  • Precise: Low smile.

  • Easy integration: Compact and robust designs.

Fields of Application

  • Material processing: Plastic welding, soldering, hardening and annealing of metals.

  • Medical technology: Hair removal, surgery, dentistry and ophthalmology.

  • Illumination: IR monitoring.

  • Metrology: Particle counting.

  • Printing industry: Computer-to-Plate (CtP).

  • Science and research: Excitation light source.

  • Industry: Pumping sources for fiber lasers and solid-state lasers.

Product name / data sheetWavelength in nmOutput power in WOperation modeCoolingCollimationHeatsink
STJ-JOLD-32-CPBN-1L80832CWpassively cooledfast & slow axisCS
STJ-JOLD-35-CPFN-1L80835CWpassively cooledfast axisCS
STJ-JOLD-40-CPNN-1L80840CWpassively cooledwithoutCS
STJ-JOLD-40-xPNN-1L-808nm80840CWpassively cooledwithoutCS
STJ-JOLD-50-CPBN-1L80850CWpassively cooledfast & slow axisCS
STJ-JOLD-50-CANN-1L80850CWactively cooledwithoutactively cooled
STJ-JOLD-55-CPFN-1L80855CWpassively cooledfast axisCS
STJ-JOLD-60-CPNN-1L80860CWpassively cooledwithoutCS
STJ-JOLD-60-xPNN-1L-808nm80860CWpassively cooledwithoutCS
STJ-JOLD-80-CANN-1L80880CWactively cooledwithoutactively cooled
STJ-JOLD-90-QPFN-1L80890QCWpassively cooledfast axisCS
STJ-JOLD-100-QANN-1L808100QCWactively cooledwithoutactively cooled
STJ-JOLD-100-QPNN-1L808100QCWpassively cooledwithoutCS
STJ-JOLD-100-xPNN-1L-808nm808100QCWpassively cooledwithoutCS
STJ-JOLD-225-QPFN-1L808225QCWpassively cooledfast axisCS
STJ-JOLD-250-QPNN-1L808250QCWpassively cooledwithoutCS
STJ-JOLD-270-QPFN-1L808270QCWpassively cooledfast axisCS
STJ-JOLD-300-QPNN-1L808300QCWpassively cooledwithoutCS
STJ-JOLD-300-QPxN-1L-808nm808300QCWpassively cooledwithoutCS
STJ-JOLD-32-CPBN-1L88032CWpassively cooledfast & slow axisCS
STJ-JOLD-35-CPFN-1L88035CWpassively cooledfast axisCS
STJ-JOLD-40-CPNN-1L88040CWpassively cooledwithoutCS
STJ-JOLD-50-CPBN-1L88050CWpassively cooledfast & slow axisCS
STJ-JOLD-55-CPFN-1L88055CWpassively cooledfast axisCS
STJ-JOLD-60-CPNN-1L88060CWpassively cooledwithoutCS
STJ-JOLD-60-xPNN-1L-880nm88060CWpassively cooledwithoutCS
STJ-JOLD-68-CPBN-1L88068CWpassively cooledfast & slow axisCS
STJ-JOLD-80-CPNN-1L88080CWpassively cooledwithoutCS
STJ-JOLD-32-CPBN-1L91532CWpassively cooledfast & slow axisCS
STJ-JOLD-35-CPFN-1L91535CWpassively cooledfast axisCS
STJ-JOLD-40-CPNN-1L91540CWpassively cooledwithoutCS
STJ-JOLD-40-xPNN-1L-915nm91540CWpassively cooledwithoutCS
STJ-JOLD-50-CPBN-1L91550CWpassively cooledfast & slow axisCS
STJ-JOLD-55-CPFN-1L91555CWpassively cooledfast axisCS
STJ-JOLD-60-CPNN-1L91560CWpassively cooledwithoutCS
STJ-JOLD-60-xPNN-1L-915nm91560CWpassively cooledwithoutCS
STJ-JOLD-68-CPBN-1L91568CWpassively cooledfast & slow axisCS
STJ-JOLD-80-CPNN-1L91580CWpassively cooledwithoutCS
STJ-JOLD-40-xPNN-1L-938nm93840CWpassively cooledwithoutCS
STJ-JOLD-60-xPNN-1L-938nm93860CWpassively cooledwithoutCS
STJ-JOLD-100-xPNN-1L-938nm938100QCWpassively cooledwithoutCS
STJ-JOLD-32-CPBN-1L94032CWpassively cooledfast & slow axisCS
STJ-JOLD-35-CPFN-1L94035CWpassively cooledfast axisCS
STJ-JOLD-40-CPNN-1L94040CWpassively cooledwithoutCS
STJ-JOLD-50-CPBN-1L94050CWpassively cooledfast & slow axisCS
STJ-JOLD-55-CPFN-1L94055CWpassively cooledfast axisCS
STJ-JOLD-60-CANN-1L94060CWactively cooledwithoutactively cooled
STJ-JOLD-60-CPNN-1L94060CWpassively cooledwithoutCS
STJ-JOLD-68-CPBN-1L94068CWpassively cooledfast & slow axisCS
STJ-JOLD-80-CANN-1L94080CWactively cooledwithoutactively cooled
STJ-JOLD-80-CPNN-1L94080CWpassively cooledwithoutCS
STJ-JOLD-90-CPFN-1L94090CWpassively cooledfast axisCS
STJ-JOLD-90-QPFN-1L94090QCWpassively cooledfast axisCS
STJ-JOLD-100-QANN-1L940100QCWactively cooledwithoutactively cooled
STJ-JOLD-100-CPNN-1L940100CWpassively cooledwithoutCS
STJ-JOLD-100-QPNN-1L940100QCWpassively cooledwithoutCS
STJ-JOLD-120-CPNN-1L940120CWpassively cooledwithoutCN
STJ-JOLD-160-CPNN-1L940160CWpassively cooledwithoutCN
STJ-JOLD-180-CPFN-1L940180CWpassively cooledfast axisCN
STJ-JOLD-200-CPNN-1L940200CWpassively cooledwithoutCN
STJ-JOLD-40-xPNN-1L-976nm97640CWpassively cooledwithoutCS
STJ-JOLD-60-xPNN-1L-976nm97660CWpassively cooledwithoutCS
STJ-JOLD-32-CPBN-1L98032CWpassively cooledfast & slow axisCS
STJ-JOLD-35-CPFN-1L98035CWpassively cooledfast axisCS
STJ-JOLD-40-CPNN-1L98040CWpassively cooledwithoutCS
STJ-JOLD-50-CPBN-1L98050CWpassively cooledfast & slow axisCS
STJ-JOLD-50-CANN-1L98050CWactively cooledwithoutactively cooled
STJ-JOLD-55-CPFN-1L98055CWpassively cooledfast axisCS
STJ-JOLD-60-CPNN-1L98060CWpassively cooledwithoutCS
STJ-JOLD-68-CPBN-1L98068CWpassively cooledfast & slow axisCS
STJ-JOLD-80-CANN-1L98080CWactively cooledwithoutactively cooled
STJ-JOLD-80-CPNN-1L98080CWpassively cooledwithoutCS
STJ-JOLD-90-CPFN-1L98090CWpassively cooledfast axisCS
STJ-JOLD-100-CPNN-1L980100CWpassively cooledwithoutCS
STJ-JOLD-120-CPNN-1L980120CWpassively cooledwithoutCN
STJ-JOLD-160-CPNN-1L980160CWpassively cooledwithoutCN
STJ-JOLD-23-CPFN-1L147023CWpassively cooledfast axisCN
STJ-JOLD-25-CPNN-1L147025CWpassively cooledwithoutCN

3. CW Diode Laser Stacks

Up to 12 laser bars to form actively cooled stacks for CW mode.

Our vertical stacks can be used to increase the optical output power of your diode laser. To do so, we stack up to 12 mounted laser bars to form a diode laser stack or an assembly. Each of these laser bars individually supplies up to 120watts in CW mode. Because of the small gaps between the laser bars, you obtain maximum brilliance from the stacks, enabling you to work highly effective. You can choose between laser diode stacks with a Fast-Axis (FA) or combined Fast-Axis/Slow-Axis (SA) collimation.diode laser chip bar stack

Product feature

  • Wavelength: 808 - 980nm

  • Output power: 128 - 1440W

  • Operation mode: CW

  • Cooling: actively cooled / passively cooled

  • Collimation: fast axis / fast axis and slow axis / without

Benefits

  • Best price/performance ratio: Because of the small gaps between the laser bars.

  • Powerful: Each of the 12 laser bars individually supplies up to 120 watts in CW mode.

  • Flexible: CW or QCW mode.

  • Easy to integrate: Compact designs.

Fields of Application

  • Material processing: Curing of metals, annealing.

  • Medical technology: Esthetics, dermatology.

  • Industry: Pumping source for fiber lasers and solid-state lasers.

  • Science and research: Pumping source for fiber lasers.

Part numberWavelength in nmOutput power in WOperation modeCoolingCollimation
STJ-JOLD-128-CABN-4A808128CWactively cooledfast & slow axis
STJ-JOLD-135-CAFN-3A808135CWactively cooledfast axis
STJ-JOLD-150-CANN-3A808150CWactively cooledwithout
STJ-JOLD-180-CAFN-4A808180CWactively cooledfast axis
STJ-JOLD-192-CABN-6A808192CWactively cooledfast & slow axis
STJ-JOLD-200-CABN-4A808200CWactively cooledfast & slow axis
STJ-JOLD-200-CANN-4A808200CWactively cooledwithout
STJ-JOLD-216-CAFN-3A808216CWactively cooledfast axis
STJ-JOLD-225-CAFN-5A808225CWactively cooledfast axis
STJ-JOLD-240-CANN-3A808240CWactively cooledwithout
STJ-JOLD-250-CANN-5A808250CWactively cooledwithout
STJ-JOLD-256-CABN-8A808256CWactively cooledfast & slow axis
STJ-JOLD-270-CAFN-6A808270CWactively cooledfast axis
STJ-JOLD-288-CAFN-4A808288CWactively cooledfast axis
STJ-JOLD-300-CABN-6A808300CWactively cooledfast & slow axis
STJ-JOLD-300-CANN-6A808300CWactively cooledwithout
STJ-JOLD-310-HS-4L808310CWpassively cooledwithout
STJ-JOLD-320-CABN-10A808320CWactively cooledfast & slow axis
STJ-JOLD-320-CANN-4A808320CWactively cooledwithout
STJ-JOLD-360-CAFN-5A808360CWactively cooledfast axis
STJ-JOLD-360-CAFN-8A808360CWactively cooledfast axis
STJ-JOLD-384-CABN-12A808384CWactively cooledfast & slow axis
STJ-JOLD-400-CABN-8A808400CWactively cooledfast & slow axis
STJ-JOLD-400-CANN-5A808400CWactively cooledwithout
STJ-JOLD-400-CANN-8A808400CWactively cooledwithout
STJ-JOLD-432-CAFN-6A808432CWactively cooledfast axis
STJ-JOLD-450-CAFN-10A808450CWactively cooledfast axis
STJ-JOLD-480-CANN-6A808480CWactively cooledwithout
STJ-JOLD-500-CABN-10A808500CWactively cooledfast & slow axis
STJ-JOLD-500-CANN-10A808500CWactively cooledwithout
STJ-JOLD-540-CAFN-12A-808nm808540CWactively cooledfast axis
STJ-JOLD-576-CAFN-8A808576CWactively cooledfast axis
STJ-JOLD-600-CABN-12A808600CWactively cooledfast & slow axis
STJ-JOLD-600-CANN-12A808600CWactively cooledwithout
STJ-JOLD-640-CANN-8A808640CWactively cooledwithout
STJ-JOLD-720-CAFN-10A808720CWactively cooledfast axis
STJ-JOLD-800-CANN-10A808800CWactively cooledwithout
STJ-JOLD-864-CAFN-12A808864CWactively cooledfast axis
STJ-JOLD-960-CANN-12A808960CWactively cooledwithout
STJ-JOLD-128-CABN-4A940128CWactively cooledfast & slow axis
STJ-JOLD-162-CAFN-3A940162CWactively cooledfast axis
STJ-JOLD-180-CANN-3A940180CWactively cooledwithout
STJ-JOLD-192-CABN-6A940192CWactively cooledfast & slow axis
STJ-JOLD-200-CABN-4A940200CWactively cooledfast & slow axis
STJ-JOLD-216-CAFN-3A940216CWactively cooledfast axis
STJ-JOLD-216-CAFN-4A940216CWactively cooledfast axis
STJ-JOLD-240-CANN-4A940240CWactively cooledwithout
STJ-JOLD-256-CABN-8A940256CWactively cooledfast & slow axis
STJ-JOLD-270-CAFN-3A940270CWactively cooledfast axis
STJ-JOLD-270-CAFN-5A940270CWactively cooledfast axis
STJ-JOLD-288-CAFN-4A940288CWactively cooledfast axis
STJ-JOLD-300-CABN-6A940300CWactively cooledfast & slow axis
STJ-JOLD-300-CANN-3A940300CWactively cooledwithout
STJ-JOLD-300-CANN-5A940300CWactively cooledwithout
STJ-JOLD-310-HS-4L940310CWpassively cooledwithout
STJ-JOLD-320-CABN-10A940320CWactively cooledfast & slow axis
STJ-JOLD-324-CAFN-6A940324CWactively cooledfast axis
STJ-JOLD-330-CAFN-3A940330CWactively cooledfast axis
STJ-JOLD-360-CAFN-4A940360CWactively cooledfast axis
STJ-JOLD-360-CAFN-5A940360CWactively cooledfast axis
STJ-JOLD-360-CANN-3A940360CWactively cooledwithout
STJ-JOLD-360-CANN-6A940360CWactively cooledwithout
STJ-JOLD-384-CABN-12A940384CWactively cooledfast & slow axis
STJ-JOLD-400-CABN-8A940400CWactively cooledfast & slow axis
STJ-JOLD-400-CANN-4A940400CWactively cooledwithout
STJ-JOLD-432-CAFN-6A940432CWactively cooledfast axis
STJ-JOLD-432-CAFN-8A940432CWactively cooledfast axis
STJ-JOLD-440-CAFN-4A940440CWactively cooledfast axis
STJ-JOLD-450-CAFN-5A940450CWactively cooledfast axis
STJ-JOLD-480-CANN-4A940480CWactively cooledwithout
STJ-JOLD-480-CANN-4A940480CWactively cooledwithout
STJ-JOLD-480-CANN-8A940480CWactively cooledwithout
STJ-JOLD-500-CABN-10A940500CWactively cooledfast & slow axis
STJ-JOLD-500-CANN-5A940500CWactively cooledwithout
STJ-JOLD-540-CAFN-10A940540CWactively cooledfast axis
STJ-JOLD-540-CAFN-6A940540CWactively cooledfast axis
STJ-JOLD-550-CAFN-5A940550CWactively cooledfast axis
STJ-JOLD-576-CAFN-8A940576CWactively cooledfast axis
STJ-JOLD-600-CABN-12A940600CWactively cooledfast & slow axis
STJ-JOLD-600-CANN-10A940600CWactively cooledwithout
STJ-JOLD-600-CANN-5A940600CWactively cooledwithout
STJ-JOLD-600-CANN-6A940600CWactively cooledwithout
STJ-JOLD-648-CAFN-12A940648CWactively cooledfast axis
STJ-JOLD-660-CAFN-6A940660CWactively cooledfast axis
STJ-JOLD-720-CAFN-10A940720CWactively cooledfast axis
STJ-JOLD-720-CAFN-8A940720CWactively cooledfast axis
STJ-JOLD-720-CANN-12A940720CWactively cooledwithout
STJ-JOLD-720-CANN-6A940720CWactively cooledwithout
STJ-JOLD-800-CANN-8A940800CWactively cooledwithout
STJ-JOLD-864-CAFN-12A940864CWactively cooledfast axis
STJ-JOLD-880-CAFN-8A940880CWactively cooledfast axis
STJ-JOLD-900-CAFN-10A940900CWactively cooledfast axis
STJ-JOLD-960-CANN-8A940960CWactively cooledwithout
STJ-JOLD-1000-CANN-10A9401000CWactively cooledwithout
STJ-JOLD-1080-CAFN-12A9401080CWactively cooledfast axis
STJ-JOLD-1100-CAFN-10A9401100CWactively cooledfast axis
STJ-JOLD-1200-CANN-10A9401200CWactively cooledwithout
STJ-JOLD-1200-CANN-12A9401200CWactively cooledwithout
STJ-JOLD-1320-CAFN-12A9401320CWactively cooledfast axis
STJ-JOLD-1440-CANN-12A9401440CWactively cooledwithout
STJ-JOLD-128-CABN-4A980128CWactively cooledfast & slow axis
STJ-JOLD-135-CAFN-3A980135CWactively cooledfast axis
STJ-JOLD-150-CANN-3A980150CWactively cooledwithout
STJ-JOLD-180-CAFN-4A980180CWactively cooledfast axis
STJ-JOLD-192-CABN-6A980192CWactively cooledfast & slow axis
STJ-JOLD-200-CABN-4A980200CWactively cooledfast & slow axis
STJ-JOLD-200-CANN-4A980200CWactively cooledwithout
STJ-JOLD-216-CAFN-3A980216CWactively cooledfast axis
STJ-JOLD-225-CAFN-5A980225CWactively cooledfast axis
STJ-JOLD-250-CANN-5A980250CWactively cooledwithout
STJ-JOLD-256-CABN-8A980256CWactively cooledfast & slow axis
STJ-JOLD-270-CAFN-3A980270CWactively cooledfast axis
STJ-JOLD-270-CAFN-6A980270CWactively cooledfast axis
STJ-JOLD-288-CAFN-4A980288CWactively cooledfast axis
STJ-JOLD-300-CABN-6A980300CWactively cooledfast & slow axis
STJ-JOLD-300-CANN-3A980300CWactively cooledwithout
STJ-JOLD-300-CANN-6A980300CWactively cooledwithout
STJ-JOLD-320-CABN-10A980320CWactively cooledfast & slow axis
STJ-JOLD-330-CAFN-3A980330CWactively cooledfast axis
STJ-JOLD-360-CAFN-4A980360CWactively cooledfast axis
STJ-JOLD-360-CAFN-5A980360CWactively cooledfast axis
STJ-JOLD-360-CAFN-8A980360CWactively cooledfast axis
STJ-JOLD-360-CANN-3A980360CWactively cooledwithout
STJ-JOLD-384-CABN-12A980384CWactively cooledfast & slow axis
STJ-JOLD-400-CABN-8A980400CWactively cooledfast & slow axis
STJ-JOLD-400-CANN-4A980400CWactively cooledwithout
STJ-JOLD-400-CANN-8A980400CWactively cooledwithout
STJ-JOLD-432-CAFN-6A980432CWactively cooledfast axis
STJ-JOLD-440-CAFN-4A980440CWactively cooledfast axis
STJ-JOLD-450-CAFN-10A980450CWactively cooledfast axis
STJ-JOLD-450-CAFN-5A980450CWactively cooledfast axis
STJ-JOLD-500-CABN-10A980500CWactively cooledfast & slow axis
STJ-JOLD-500-CANN-10A980500CWactively cooledwithout
STJ-JOLD-500-CANN-5A980500CWactively cooledwithout
STJ-JOLD-540-CAFN-12A980540CWactively cooledfast axis
STJ-JOLD-540-CAFN-6A980540CWactively cooledfast axis
STJ-JOLD-550-CAFN-5A980550CWactively cooledfast axis
STJ-JOLD-576-CAFN-8A980576CWactively cooledfast axis
STJ-JOLD-600-CABN-12A980600CWactively cooledfast & slow axis
STJ-JOLD-600-CANN-12A980600CWactively cooledwithout
STJ-JOLD-600-CANN-5A980600CWactively cooledwithout
STJ-JOLD-600-CANN-6A980600CWactively cooledwithout
STJ-JOLD-660-CAFN-6A980660CWactively cooledfast axis
STJ-JOLD-720-CAFN-10A980720CWactively cooledfast axis
STJ-JOLD-720-CAFN-8A980720CWactively cooledfast axis
STJ-JOLD-720-CANN-6A980720CWactively cooledwithout
STJ-JOLD-800-CANN-8A980800CWactively cooledwithout
STJ-JOLD-864-CAFN-12A980864CWactively cooledfast axis
STJ-JOLD-880-CAFN-8A980880CWactively cooledfast axis
STJ-JOLD-900-CAFN-10A980900CWactively cooledfast axis
STJ-JOLD-960-CANN-8A980960CWactively cooledwithout
STJ-JOLD-1000-CANN-10A9801000CWactively cooledwithout
STJ-JOLD-1080-CAFN-12A9801080CWactively cooledfast axis
STJ-JOLD-1100-CAFN-10A9801100CWactively cooledfast axis
STJ-JOLD-1200-CANN-10A9801200CWactively cooledwithout
STJ-JOLD-1200-CANN-12A9801200CWactively cooledwithout
STJ-JOLD-1320-CAFN-12A9801320CWactively cooledfast axis
STJ-JOLD-1440-CANN-12A9801440CWactively cooledwithout

4. QCW diode laser stacks

Our passively cooled diode laser stacks and assemblies for QCW operation are highly efficient – even under harsh environmental conditions. We assemble our vertical and horizontal stacks using gold and tin solder (hard solder) as standard. This enables hard-pulse operation under demanding climatic conditions. Because of their lightweight construction, the stacks also easily withstand vibrations and shocks. Thanks to their reliability and efficiency, our diode laser stacks are also used as pumping sources for solid-state lasers, including in the field of high energy research.

As standard, we form passively cooled vertical stacks consisting up to 16 laser elements or arrange up to 4 laser elements in a row. Other configurations are available upon request. You can thus achieve output power up into the kW range.diode laser chip bar stack

Product feature

  • Wavelength: 808 - 940nm

  • Output power: 270 - 2400W

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

  • Collimation: fast axis / without

Benefits

  • Efficient: High output power up into the kW range.

  • Compact: Small and lightweight design is easily integrated.

  • Robust: Shock and vibration resistant.

  • Reliable: Works even under the most demanding climatic conditions.

  • High-quality: We only use hard solder.

  • Fields of Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: Excitation light source for solid-state and fiber lasers.

Part numberWavelength in nmOutput power in WOperation modeCoolingCollimation
STJ-JOLD-270-QAFN-3A808270QCWactively cooledfast axis
STJ-JOLD-300-QANN-3A808300QCWactively cooledwithout
STJ-JOLD-360-QAFN-4A808360QCWactively cooledfast axis
STJ-JOLD-400-QANN-4A808400QCWactively cooledwithout
STJ-JOLD-450-QAFN-5A808450QCWactively cooledfast axis
STJ-JOLD-500-QANN-5A808500QCWactively cooledwithout
STJ-JOLD-540-QAFN-6A808540QCWactively cooledfast axis
STJ-JOLD-600-QANN-6A808600QCWactively cooledwithout
STJ-JOLD-720-QAFN-8A808720QCWactively cooledfast axis
STJ-JOLD-780-QAF-8A-med808780QCWpassively cooledfast axis
STJ-JOLD-780-QA-8A-med808780QCWpassively cooledwithout
STJ-JOLD-800-QANN-8A808800QCWactively cooledwithout
STJ-JOLD-810-QF-3A808810QCWpassively cooledwithout
STJ-JOLD-900-QAFN-10A808900QCWactively cooledfast axis
STJ-JOLD-900-Q-3A808900QCWpassively cooledwithout
STJ-JOLD-1000-QANN-10A8081000QCWactively cooledwithout
STJ-JOLD-1080-QAFN-12A8081080QCWactively cooledfast axis
STJ-JOLD-1200-QANN-12A8081200QCWactively cooledwithout
STJ-JOLD-1560-QAF-2x8A-med8081560QCWpassively cooledfast axis
STJ-JOLD-1600-QA-2x8A-med8081600QCWpassively cooledwithout
STJ-JOLD-2160-QF-8A8082160QCWpassively cooledwithout
STJ-JOLD-2400-Q-8A8082400QCWpassively cooledwithout
STJ-JOLD-2400-QA-8A-industry8082400QCWpassively cooledwithout
STJ-JOLD-270-QAFN-3A940270QCWactively cooledfast axis
STJ-JOLD-300-QANN-3A940300QCWactively cooledwithout
STJ-JOLD-360-QAFN-4A940360QCWactively cooledfast axis
STJ-JOLD-400-QANN-4A940400QCWactively cooledwithout
STJ-JOLD-450-QAFN-5A940450QCWactively cooledfast axis
STJ-JOLD-500-QANN-5A940500QCWactively cooledwithout
STJ-JOLD-540-QAFN-6A940540QCWactively cooledfast axis
STJ-JOLD-600-QANN-6A940600QCWactively cooledwithout
STJ-JOLD-720-QAFN-8A940720QCWactively cooledfast axis
STJ-JOLD-800-QANN-8A940800QCWactively cooledwithout
STJ-JOLD-810-QF-3A940810QCWpassively cooledwithout
STJ-JOLD-900-QAFN-10A940900QCWactively cooledfast axis
STJ-JOLD-900-Q-3A940900QCWpassively cooledwithout
STJ-JOLD-1000-QANN-10A9401000QCWactively cooledwithout
STJ-JOLD-1080-QAFN-12A9401080QCWactively cooledfast axis
STJ-JOLD-1200-QANN-12A9401200QCWactively cooledwithout
STJ-JOLD-2160-QF-8A9402160QCWpassively cooledwithout
STJ-JOLD-2400-Q-8A9402400QCWpassively cooledwithout
STJ-JOLD-2400-QA-8A-industry9402400QCWpassively cooledwithout

STF Series Narrow Linewidth Single-frequency Laser Diodes

diode laser1. Free Space Narrow Linewidth Laser Diode 785nm 350mW

Applications:

  • Raman Spectroscopy

  • Medical

  • Spectrum Analysis

  • Scientific Research

Part number: STF-FRLD-785-350-FS-VBG-BTF

SpecificationsUnitMinTypMax
Optical Data



CW Output PowermW350--
Center Wavelength nm784.5785.0785.5
Spectral Width (FWHM)nm--0.1
Temperature Drift of nm/°C-0.01-
Current Drift of nm/A-0.05-
Electrical Data



Threshold CurrentA-0.4-
Operation CurrentA-0.9-
Operation VoltageV-2.0-
Slope EfficiencyW/A-0.7-
PD Data



CurrentμA--2000
ThermistorkΩ / β(25°)10±5% / 3450
TEC Data



Max. CurrentA--2.5
Max. VoltageV--6.3
SpecificationsUnitMinTypMax
Temperature Conditions



Case Operation Temperature°C10-30
Storage Temperature°C-20-70
Other Parameters



Lead Soldering Temperature°C--250
Lead Soldering Timesec--10
Relative Humidity (Operating)%--75
Relative Humidity (Storage)%--90
Dimensionmm38.1x12.7x8.1

diode laser2. Wavelength-stabilized Laser Diode 785nm 100mW

Features:

  • Wavelength 785nm

  • CW Output Power 100mW

Part number: STF-FRLD-785-100-VBG-TO56

SpecificationsUnitMinTypMax
Optical Data



CW Output PowermW100--
Center Wavelength nm784.5785.0785.5
Spectral Width (FWHM)nm--0.1
Temperature Drift of nm/°C-0.01-
Electrical Data



Threshold CurrentmA-50-
Operation CurrentmA-120-
Slope EfficiencyW/A-0.85-
Operation VoltageV-2.0-
Temperature Conditions



Case Operation Temperature°C20-30
Storage Temperature°C-20-70
Other Parameters



Lead Soldering Temperature°C--250
Lead Soldering Timesec--10
Relative Humidity (Operating)%--75
Relative Humidity (Storage)%--90
DimensionmmDia. 5.4x12.6

3. VBG Narrow-line Laser Diode 780nm 100mW

diode laserSTF-FOLD-785-100S-VBG is a single mode semiconductor laser diode with 100mW CW output power at 785nm. Due to the integrated VBG the wavelength is fixed and the spectral width is very narrow. It is suitable for the use in various optoelectronic applications.

APPLICATIONS:

  • Raman Spectroscopy

  • Bio-Instrumentation

  • Metrology

  • Sensing

  • Analytical Instrumentation

Optical and electrical characteristics (T = 25°C, P = 100mW):

Part number: STF-FOLD-785-100S-VBG

Operating ParametersSymbolMinTypMaxUnit
Optical PowerPout--100mW
Wavelength784785786nm
Line Width-175-MHz
Threshold CurrentIth-50-mA
Forward CurrentIf-130200mA
Forward VoltageVf-1.32.2V
Reverse VoltageVr--2V
Slope EfficiencyP/I-0.9-mW/mA
Beam Divergence, Perpendic.-25-°
Beam Divergence, Parallel||-10-°
Operating TemperatureTop0-40°C
Central Stabilized TemperatureTc15-35°C
Stabilized Temperature RangeTr15--°C
Storage TemperatureTs-20-70°C
Emitter SizeEs1.5 x 3µm
Coherence Length> 1m
Polarization OrientationTE
DimensionDia 4.4x3.9mm

diode lasers

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